Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1371-1375

  Simon, N ^a   Girard, H ^a   Manesse, M ^a   Ballutaud, D ^b   Etcheberry, A ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Annealing; Anodic; Capacitance voltage; Cathodic; Ce4+ Ce3+; Charge transfer; Diamond films; Hydrogen; Preconditioning treatment; Superficial conductive layer; XPS

Indexed keywords

ANNEALING; BORON; BORON COMPOUNDS; DIAMONDS; ELECTRODES; HYDROGEN; ISOTHERMAL ANNEALING; METALLIZING; NONMETALS;

ANODIC; BORON DOPED DIAMOND ELECTRODES; CAPACITANCE -VOLTAGE; CATHODIC; CE4+/CE3+; CHARGE TRANSFER; DEPOSITION PROCESSING; DIAMOND FILMS; GALVANOSTATIC; PRECONDITIONING TREATMENT; SUPERFICIAL CONDUCTIVE LAYER; XPS;

ELECTROCHEMICAL ELECTRODES;

EID: 48849104854     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.03.003     Document Type: Article

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