Enhanced diffusion of boron in Si during doping from borosilicate glass

Journal of the Electrochemical Society

Volumn 145, Issue 7, 1998, Pages 2534-2537

  Miyake, Masayasu ^a,b,c  

^a NTT CORPORATION   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

^c FUKUYAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOROSILICATE GLASS; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

FURNACE ANNEALING (FA);

SEMICONDUCTING BORON;

EID: 0032122867     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838674     Document Type: Article

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