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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2483-2491

Effective diffusion coefficient and controlling process of P diffusion in Si based on the pair diffusion models of vacancy and interstitial mechanisms

(4) Yoshida, Masayuki a Morooka, Masami b Takahashi, Manabu b Tomokage, Hajime c

a Yoshida Semiconductor Laboratory (Japan)

b FUKUOKA INSTITUTE OF TECHNOLOGY (Japan)

c FUKUOKA UNIVERSITY (Japan)

Author keywords

Controlling process of P diffusion; Decrease in quasi self interstitial formation energy; Decrease in quasi vacancy formation energy; Effective P diffusion coefficient; Pair diffusion model

Indexed keywords

DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; OXIDATION; PHOSPHORUS; POINT DEFECTS;

INTERSTITIALS; VACANCIES;

SEMICONDUCTING SILICON;

EID: 0033726987 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2483 Document Type: Article

Times cited : (7)

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