Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy

IEEE Electron Device Letters

Volumn 19, Issue 5, 1998, Pages 171-173

  Lim, E H ^a,b   Karunasiri, G ^a,b   Chua, S J ^b   Wong, H ^c   Pey, K L ^c   Lee, K H ^c  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY MEASUREMENT; NONDESTRUCTIVE EXAMINATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; TITANIUM COMPOUNDS;

TITANIUM SILICIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0032070493     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.669738     Document Type: Article

References (10)

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