-
1
-
-
28144464161
-
An H.264/MPEG-4 Audio/Visual Codec LSI with Modulewise Dynamic Voltage/Frequency Scaling
-
Feb
-
T. Fujiyoshi, S. Shiratake, S. Nomura, T. Nishikawa, Y. Kitasho, H. Arakida, Y. Okuda, Y. Tsuboi, M. Hamada, H. Hara, T. Fujita, F. Hatori, T. Shimazawa, K. Yahagi, H. Takeda, M. Murakata, F. Minami, N. Kawabe, T. Kitahara, K. Seta, M. Takahashi, Y. Oowaki, and T. Furuyama, "An H.264/MPEG-4 Audio/Visual Codec LSI with Modulewise Dynamic Voltage/Frequency Scaling," 2005 IEEE International Solid State Circuit Conference Digest of Technical Papers, vol. 48, pp. 132-133, Feb. 2005.
-
(2005)
2005 IEEE International Solid State Circuit Conference Digest of Technical Papers
, vol.48
, pp. 132-133
-
-
Fujiyoshi, T.1
Shiratake, S.2
Nomura, S.3
Nishikawa, T.4
Kitasho, Y.5
Arakida, H.6
Okuda, Y.7
Tsuboi, Y.8
Hamada, M.9
Hara, H.10
Fujita, T.11
Hatori, F.12
Shimazawa, T.13
Yahagi, K.14
Takeda, H.15
Murakata, M.16
Minami, F.17
Kawabe, N.18
Kitahara, T.19
Seta, K.20
Takahashi, M.21
Oowaki, Y.22
Furuyama, T.23
more..
-
2
-
-
33645671278
-
Monitoring Scheme for Minimizing Power Consumption by Means of Supply and Threshold Voltage Control in Active and Standby Modes
-
June
-
M. Nomura, Y. Ikenaga, K. Takeda, Y. Nakazawa, Y. Aimoto, and Y. Hagihara, "Monitoring Scheme for Minimizing Power Consumption by Means of Supply and Threshold Voltage Control in Active and Standby Modes," 2005 Symposium on VLSI Circuits Digest of Technical Papers, pp. 308-311, June 2005.
-
(2005)
2005 Symposium on VLSI Circuits Digest of Technical Papers
, pp. 308-311
-
-
Nomura, M.1
Ikenaga, Y.2
Takeda, K.3
Nakazawa, Y.4
Aimoto, Y.5
Hagihara, Y.6
-
3
-
-
0023437909
-
-
E. Seevinck, F. J. List, and J. Lohstroh, Static-Noise Margin Analysis of MOS SRAM Cells, IEEE Journal of Solid-State Circuits, sc-22, pp. 748-754, Oct. 1987.
-
E. Seevinck, F. J. List, and J. Lohstroh, "Static-Noise Margin Analysis of MOS SRAM Cells," IEEE Journal of Solid-State Circuits, vol. sc-22, pp. 748-754, Oct. 1987.
-
-
-
-
4
-
-
0242611631
-
0.4-V Logic Library Friendly SRAM Array Using Rectangular-Diffusion Cell and Delta-Array-Voltage Scheme
-
June
-
M. Yamaoka, K. Osada, and K. Ishibashi, "0.4-V Logic Library Friendly SRAM Array Using Rectangular-Diffusion Cell and Delta-Array-Voltage Scheme," 2002 Symposium on VLSI Circuits Digest of Technical Papers, pp. 170-173, June 2002.
-
(2002)
2002 Symposium on VLSI Circuits Digest of Technical Papers
, pp. 170-173
-
-
Yamaoka, M.1
Osada, K.2
Ishibashi, K.3
-
5
-
-
33644640188
-
Stable SRAM Cell Design for the 32nm Node and Beyond
-
June
-
L. Chang, D. M. Fried, J. Hergenrother, J. W. Sleight, R. H. Dennard, R. K. Montoye, L. Sekaric, S. J. McNab, A. W. Topol, C. D. Adams, K. W. Geuarini, and W. Haensch, "Stable SRAM Cell Design for the 32nm Node and Beyond," 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 128-129, June 2005.
-
(2005)
2005 Symposium on VLSI Technology Digest of Technical Papers
, pp. 128-129
-
-
Chang, L.1
Fried, D.M.2
Hergenrother, J.3
Sleight, J.W.4
Dennard, R.H.5
Montoye, R.K.6
Sekaric, L.7
McNab, S.J.8
Topol, A.W.9
Adams, C.D.10
Geuarini, K.W.11
Haensch, W.12
-
6
-
-
0142155095
-
A Sub-1V Bootstrap Pass-Transistor Logic
-
Apr
-
K. Fujii, T. Douseki, "A Sub-1V Bootstrap Pass-Transistor Logic," IEICE Transaction on Electronics, vol. E86-C, no. 4, pp.604-611, Apr. 2003.
-
(2003)
IEICE Transaction on Electronics
, vol.E86-C
, Issue.4
, pp. 604-611
-
-
Fujii, K.1
Douseki, T.2
-
7
-
-
33744727650
-
Active Body-Biasing Control Technique for Bootstrap Pass-Transistor Logic on PD-SOI at 0.5V-VDD
-
Oct
-
M. Iijima, M. Kitamura, K. Hamada, K. Fukuoka, M. Numa, A. Tada, and S. Maegawa, "Active Body-Biasing Control Technique for Bootstrap Pass-Transistor Logic on PD-SOI at 0.5V-VDD," 2005 IEEE International SOI Conference, pp. 50-51, Oct. 2005.
-
(2005)
2005 IEEE International SOI Conference
, pp. 50-51
-
-
Iijima, M.1
Kitamura, M.2
Hamada, K.3
Fukuoka, K.4
Numa, M.5
Tada, A.6
Maegawa, S.7
-
8
-
-
17344383097
-
Impact of 0.10 μm SOI CMOS with Body-Tied Hybrid Trench Isolation Structure to Break Through the Scaling Crisis of Silicon Technology
-
Y. Hirano, T. Matsumoto, S. Maeda, T. Iwamatsu, T. Kunikiyo, K. Nii, K. Yamamoto, Y. Yamaguchi, T. Ipposhi, S. Maegawa, and M. Inuishi, "Impact of 0.10 μm SOI CMOS with Body-Tied Hybrid Trench Isolation Structure to Break Through the Scaling Crisis of Silicon Technology," IEEE International Electron Device Meeting Technical Digest, pp. 467, 2000.
-
(2000)
IEEE International Electron Device Meeting Technical Digest
, pp. 467
-
-
Hirano, Y.1
Matsumoto, T.2
Maeda, S.3
Iwamatsu, T.4
Kunikiyo, T.5
Nii, K.6
Yamamoto, K.7
Yamaguchi, Y.8
Ipposhi, T.9
Maegawa, S.10
Inuishi, M.11
-
9
-
-
0842266678
-
Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application
-
Dec
-
Y. Hirano, T. Ipposhi, H. Dang, T. Matsumoto, T. Iwamatsu, K. Nii, Y. Tsukamoto, H. Kato, S. Maegawa, K. Arimoto, Y. Inoue, M. Inuishi, and Y. Ohji, "Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application," IEEE International Electron Device Meeting Technical Digest, Dec. 2003.
-
(2003)
IEEE International Electron Device Meeting Technical Digest
-
-
Hirano, Y.1
Ipposhi, T.2
Dang, H.3
Matsumoto, T.4
Iwamatsu, T.5
Nii, K.6
Tsukamoto, Y.7
Kato, H.8
Maegawa, S.9
Arimoto, K.10
Inoue, Y.11
Inuishi, M.12
Ohji, Y.13
|