Luminescence of Er-doped amorphous silicon quantum dots

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 231-234

  Park, Nae Man ^a   Kim, Tae Youb ^a   Kim, Sang Hyeob ^a   Sung, Gun Yong ^a   Cho, Kwan Sik ^b   Shin, Jung H ^b   Kim, Baek Hyun ^c   Park, Seong Ju ^c   Lee, Jung Kun ^d   Nastasi, Michael ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

A Si QD; Er luminescence; Size effect

Indexed keywords

ABSORPTION; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLINE MATERIALS; DEFECTS; ERBIUM; LIGHT EMITTING DIODES; LUMINESCENCE; NANOSTRUCTURED MATERIALS; QUENCHING; SEMICONDUCTOR DOPING; THIN FILMS;

A-SI QD; ER LUMINESCENCE; NANOCRYSTALS; SILICON QUANTUM DOTS; SIZE EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444261231     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.08.053     Document Type: Conference Paper

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