A modular high temperature measurement set-up for semiconductor device characterization

Collection of Papers Presented at The 13th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC

Volumn , Issue , 2007, Pages 189-194

  Borthen, Peter ^a   Wachutka, Gerhard ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; MODELS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; SILICON CARBIDE; TEMPERATURE MEASUREMENT;

EXPERIMENTAL EQUIPMENTS; HIGH TEMPERATURE; HIGH-TEMPERATURE MEASUREMENTS; IGBT DEVICES; MEASURED DATA; MEASURING TEMPERATURE; MODEL PARAMETERS; NUMERICAL SIMULATIONS; PHYSICAL MODELLING; PRACTICAL USE; REVALIDATION; ROOM TEMPERATURES; SEMICONDUCTOR-DEVICE CHARACTERIZATION; SILICON DEVICES; TEMPERATURE RANGES; TEST STRUCTURES; VDMOSFET;

SEMICONDUCTOR DEVICES;

EID: 48049111839     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/THERMINIC.2007.4451775     Document Type: Conference Paper

References (17)

1. S. Reggiani et al., "Measurement and modeling of the electron impactionization coefficient in silicon up to very high temperatures," IEEE Trans. on Electron Devices, vol. 52, no. 10, pp. 2290-2296, Oct. 2005.
2. S. Reggiani et al., "Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility," IEEE Trans. on Electron Devices, vol. 49, no. 3, pp. 490-499, Mar. 2002.
3. Z.D. Schwartz, A.N. Downey, S.A. Alterovitz and G.E. Ponchak, "High-temperature RF probe station for device characterization through 500/spl deg/C and 50 GHz," IEEE Trans. on Instrumentation and Measurements, vol. 54, no. 1, pp. 369-375, Feb. 2005.
4. A. Schenk, "Advanced physical models for silicon device simulation", Springer Verlag, Wien, 1998
5. S. Reggiani, M Valdinoci, L. Colalongo and G. Baccarani, "A unified analytical model for bulk and surface mobility in Si n- and p-channel mosfets", ESSDERC 1999 Proceedings, pp. 240-243, 1999
6. Trinos, www. trinos.com
7. Oerlikon.-Leybold, www.oerlikon.com
8. Yuan Liu, "Simulation, Tests und Optimierung eines Kabelpulsers", Diploma thesis, TU München, April 2007
9. H. Schwarzbauer and R. Kuhnert, "Novel large area joining technique for improved power device performance," IEEE Trans. on Ind. Appl., vol. 27, no. 1, pp. 93-95, Jan./Feb. 1991.
10. G. Masetti, M. Severi and S. Solmi, "Modelling od carrier mobility against carrier concentration in Arsenic-, Phosphorus- and Boron-doped Silicon", IEEE Transactions on Electron Devices, vol. ED-30, 764-769, 1983.
11. A. Icaza-Deckelmann, G. Wachutka, F. Hirler, J. Krumrey, "UIS-Failure for DMOS Power Transistors", ESSDERC 2002 Proceedings, pp. 459-462, 2002
12. Synopsis, www.synopsis.com
13. J.W. Slotboom, H.C. de Graaf, "Measurements of bandgap narrowing in Si bipolar transistors", Solid-State Electronics, vol. 19, pp. 857-862, 1976
14. C. Lombardi, S. Manzini, "A physically based mobility model for numerical simulation of nonplanar devices", IEEE Transctions on CAD, vol. 7, no.11, pp. 1164-1171, 1988
15. C. Canali, G. Majni, R. Minder, G. Ottaviani, "Electron and hole drift velicity and their empirical relation to electric field and temperature", IEEE Transactions on Electron Devices, vol. ED-22, pp. 1045-1047, 1975
16. W. Bartsch et al., "Bipolar 6.5 kV-SiC-diodes: on the road to industrial application," Proceedings of European Conference on Power Electronics and Applications, Dresden, September, 11th-14th, 2005.
17. D. Werber, P. Borthen and G. Wachutka, "Behaviour of 4H-SiC pin diodes studied by numerical device simulation," Silicon Carbide and Related Materials 2006, pp. 905-908, Trans Tech Publications Ltd, Zürich.