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Volumn 556-557, Issue , 2007, Pages 905-908

Behaviour of 4H-SiC pin diodes studied by numerical device simulation

Author keywords

High temperature measurement; Numerical simulation; Pin diodes

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DIODES; TEMPERATURE MEASUREMENT;

EID: 38449121316     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.905     Document Type: Conference Paper
Times cited : (4)

References (9)
  • 2
    • 38449117157 scopus 로고    scopus 로고
    • : Characterization and simulation of silicon power devices up to very high temperatures (Proceedings MIXDES
    • P. Borthen and G. Wachutka: Characterization and simulation of silicon power devices up to very high temperatures (Proceedings MIXDES 2006), p. 612
    • (2006) , pp. 612
    • Borthen, P.1    Wachutka, G.2
  • 5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.