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Volumn 556-557, Issue , 2007, Pages 905-908
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Behaviour of 4H-SiC pin diodes studied by numerical device simulation
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Author keywords
High temperature measurement; Numerical simulation; Pin diodes
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Indexed keywords
COMPUTER SIMULATION;
SEMICONDUCTOR DIODES;
TEMPERATURE MEASUREMENT;
CARRIER DISTRIBUTIONS;
HIGH TEMPERATURE MEASUREMENT;
INCOMPLETE IONIZATION;
NUMERICAL DEVICE SIMULATION;
PHYSICALLY BASED MODELS;
PIN DIODE;
SHOCKLEY-READ-HALL RECOMBINATIONS;
WIDE TEMPERATURE RANGES;
SILICON CARBIDE;
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EID: 38449121316
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.556-557.905 Document Type: Conference Paper |
Times cited : (4)
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References (9)
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