Sp3-rich deposition conditions and growth mechanism of tetrahedral amorphous carbon films deposited using filtered arc

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Zhu, Jiaqi ^a   Han, Jiecai ^a   Han, Xiao ^a   Schlaberg, H Inaki ^b   Wang, Jiazhi ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; ARCHITECTURAL ACOUSTICS; CARBON FILMS; DEPOSITION; DIAMOND FILMS; DIAMONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SPECTROSCOPY; EMISSION SPECTROSCOPY; ENERGY DISSIPATION; LITHOGRAPHY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; SPECTRUM ANALYSIS; VACUUM APPLICATIONS; VACUUM TECHNOLOGY;

AMERICAN INSTITUTE OF PHYSICS (AIP); CORE LEVELS; CROSS SECTIONING; DEPOSITION CONDITIONS; DEPOSITION ENERGIES; DIAMOND CRYSTALS; ELECTRON ENERGY LOSSES; EXPERIMENTAL EVIDENCE; FILM MICROSTRUCTURES; FILTERED CATHODIC VACUUM ARC (FCVA); K EDGE SPECTRA; LINE SHAPES; LOW DENSITY; MASS DENSITIES; MAXIMUM HARDNESS; SUBPLANTATION; SUBSTRATE BIASING; SURFACE LAYERING; TETRAHEDRAL AMORPHOUS CARBON (TA-C) FILMS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); VISIBLE RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY (XPS); X RAY PHOTOEMISSION (XPS); X RAY REFLECTIVITY (SXR); YOUNG'S MODULUS (IGC: E14/K14);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 47749102935     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951588     Document Type: Article

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