Computational load pull simulations of SiC microwave power transistors

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 1921-1926

  Jonsson, R ^a,b   Wahab, Q ^a,b   Rudner, S ^a,b   Svensson, C ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

Load pull; MESFET; Microwave; Physical large signal modelling; SiC; Simulation; Time domain

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; MESFET DEVICES; SIGNAL PROCESSING; SILICON CARBIDE; TRANSISTORS;

LOAD PULL SIMULATIONS;

MICROWAVE DEVICES;

EID: 0042229241     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00251-X     Document Type: Article

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