Comparison between physical simulations and experimental results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 699-702

  Eriksson, J ^a   Rorsman, N ^a   Zirath, H ^a   Jonsson, R ^b,c   Wahab, Q ^b   Rudner, S ^b,c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CHANNEL LAYERS; DOPING PROFILES; NON CONSTANT DOPING;

COMPUTER SIMULATION; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; THICKNESS MEASUREMENT;

MESFET DEVICES;

EID: 0035119655     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

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2. W.J. Schaffer, G.H. Negley, K.G. Irvine and J.W. Palmour, MRS Symposium Proc. 339 (1994), p. 595.
3. N.D. Arora, J.R. Hauser and D.J. Rouulston, IEEE Trans Electron Devices ED-29 (1982), p. 292.
4. To be published by the Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden.
5. M. Huang, N. Goldsman, C.H. Chang, I. Mayergoyz, J.M. McGarrity and D. Woolard, J. Appl. Phys. 84 (1998), p. 2065.