Better leakage reduction by exploiting the built-in MOSFET-Vth characteristics

2007 IEEE International Conference on Electro/Information Technology, EIT 2007

Volumn , Issue , 2007, Pages 85-90

  Khaled, Pervez ^a   Xu, Jingye ^a   Chowdhury, Masud H ^a  

^a University of Illinois at Chicago   (United States)

Author keywords

Dual Vth; Leakage reduction; Power gating structure

Indexed keywords

DIAGNOSTIC RADIOGRAPHY; ELECTRIC IMPEDANCE; ENERGY MANAGEMENT; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MEDICAL IMAGING; SIGNAL PROCESSING;

CONVENTIONAL POWERS; DOMINANT FACTORS; DUAL-VTH; GROUND BOUNCES; LEAKAGE REDUCTION; LOW POWERS; MOS FETS; NANOMETER SCALES; PORTABLE DEVICES; POWER CONSUMPTIONS; POWER GATING STRUCTURE; POWER MANAGEMENTS; POWER MODES; POWER SAVINGS; SIGNAL INTEGRITIES;

ELECTRIC IMPEDANCE TOMOGRAPHY;

EID: 47649132828     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EIT.2007.4374468     Document Type: Conference Paper

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