A load-shared CMOS power amplifier with efficiency boosting at low power mode for polar transmitters

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 7, 2008, Pages 1565-1574

  Lee, Dong Ho ^a,b   Park, Changkun ^a,c   Han, Jeonghu ^a,b   Kim, Younsuk ^a,d   Hong, Songcheol ^a,e   Lee, Chang Ho ^a,b   Laskar, Joy ^a,b  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Hynix Semiconductor Inc   (South Korea)

^d Samsung Electro Mechanics   (South Korea)

^e Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Cascode amplifiers; CMOSFET power amplifiers (PAs); Mode locking; Monolithic microwave integrated circuit (MMIC) PAs; Polar transmitters

Indexed keywords

BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; POWER AMPLIFIERS; RESONANT CIRCUITS; STANDARDS; TRANSMITTERS;

CASCODE AMPLIFIERS; CASCODE CONFIGURATION; CLASS-E AMPLIFIERS; CMOS TECHNOLOGIES; DRAIN EFFICIENCY; DRIVER AMPLIFIERS; EFFICIENCY IMPROVEMENTS; GATE VOLTAGES; LOW POWER MODE (LPM); LOW SUPPLY VOLTAGES; MEASUREMENT RESULTS; OUTPUT POWERS; PARALLEL RESONANT CIRCUIT; POLAR TRANSMITTERS; POWER-ADDED EFFICIENCY (PAE); SUPPLY VOLTAGES;

AMPLIFIERS (ELECTRONIC);

EID: 47649120495     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.925220     Document Type: Article

References (25)

1. W. H. Doherty, "A new high efficiency power amplifier for modulated waves," Proc. IRE, vol. 24, no. 9, pp. 1163-1182, Sep. 1836.
2. G. Hanington, P.-F. Chen, P. M. Asbeck, and L. E. Larson, "High-efficiency power amplifier using dynamic power-supply voltage for CDMA application," IEEE Trans. Microw. Theory Tech., vol. 47, no. 8, pp. 1471-1476, Aug. 1999.
3. J. Staudinger, "Stage bypassing in multi-stage PAs," presented at the IEEE MTT-S Int. Microw. Symp. Workshop, Jun. 2000.
4. H.-M. Park. S.-H. Cheon, J.-W. Park, and S. Hong, "Demonstration of on-chip appended power amplifier for improved efficiency at low power region," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2003, vol. 2, pp. 691-694.
5. Y. S. Noh and C. S. Park, "An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA application," IEEE J. Solid-State Circuits, vol. 39, no. 6, pp. 967-970, Jun. 2004.
6. P. Reynaert and M. S. J. Steyaert, "A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE," IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2598-2608, Dec. 2005.
7. T.-W. Kwak, M.-C. Lee, B.-K. Choi. H.-P. Lee, and G.-H. Cho, "A 2 W CMOS hybrid switching amplitude modulator for EDGE polar transmitters," in IEEE Int. Solid-State Circuits Conf., Dig., Feb. 2007, pp. 518-519.
8. C. Park, Y. Kim, H. Kim, and S. Hong, "Fully integrated 1.9-GHz CMOS power amplifier for polar transmitter applications," Microw. Opt. Technol. Lett., vol. 48, no. 10, pp. 2053-2056, Oct. 2006.
9. Y. Kim, C. Park, H. Kim, and S. Hong, "CMOS RF power amplifier with reconfigurable transformer," Election. Lett., vol. 42, no. 7, pp. 405-407, Mar. 2006.
10. C. Yoo and Q. Huang, "A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS," J. Solid-State Circuits, vol. 36, no. 5, pp. 823-830, May 2001.
11. T. Sowlati and D. M. W. Leenaerts, "A 2.4-GHz 0.18-μm CMOS self-biased cascode power amplifier," IEEE J. Solid-State Circuits, vol. 38, no. 8, pp. 1318-1324, Aug. 2003.
12. K. Choi, D. J. Allstot, and V. Krishnamurthy, "A 900 MHz GSM PA in 250 nm CMOS with breakdown voltage protection and programmable conduction angle," in IEEE RFIC Symp. Dig., Jun. 2004, pp. 369-372.
13. N. O. Sokal and A. D. Sokal, "Class E - A new class of high efficiency tuned single-ended switching power amplifiers," IEEE J. Solid-State Circuits, vol. SC-10, no. 3, pp. 168-176, Jun. 1975.
14. F. H. Raab, "Idealized operation of the class E tuned power amplifier," IEEE Trans. Circuits Syst., vol. CAS-24, no. 12, pp. 725-735, Dec. 1977.
15. D. K. Choi and S. I. Long, "A physically based analytic model of FET class-E power amplifiers-designing for maximum PAE," IEEE Trans. Microw. Theory Tech., vol. 47, no. 9, pp. 1712-1720, Sep. 1999.
16. I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Distributed active transformer - A new power-combining and impedance-transformation technique," IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 316-331. Jan. 2002.
17. I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Fully integrated CMOS power amplifier design using the distributed active-transformer architecture," IEEE J. Solid-State Circuits, vol. 37, no. 3, pp. 371-383, Mar. 2002.
18. I. Aoki, S. Kee, R. Magoon, R. Aparicio, F. Bohn, J. Zachan, G. Hatcher, D. McClymont, and A. Hajimiri, "A fully integrated quad-band GSM/GPRS CMOS power amplifier," IEEE Int. Solid-State Circuits Conf., Dig., pp. 570-571, Feb. 2008.
19. C. Park, Y. Kim, H. Kim, and S. Hong, "A 1.9-GHz triple-mode class-E power amplifier for a polar transmitter," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 2, pp. 148-150, Feb. 2007.
20. K. C. Tsai and P. R. Gray, "A 1.9 GHz. 1-W CMOS class-E power amplifier for wireless communications," IEEE J. Solid-State Circuits, vol. 34, no. 7, pp. 962-969, Jul. 1999.
21. K. L. R. Mertens and M. S. J. Steyaert, "A 700-MHz 1-W fully differential CMOS class-E power amplifier," IEEE J. Solid-State Circuits, vol. 37, no. 2, pp. 137-141. Feb. 2002.
22. D. Baek, "Study on X-Ku band voltage controlled oscillators," Ph.D. dissertation, Dept. Elect. Eng., KAIST. Daejeon. Korea, 2003.
23. D. H. Lee, J. Han, C. Park, and S. Hong, "A CMOS active balun using bond wire inductors and a gain boosting technique," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 9, pp. 676-678, Sep. 2007.
24. S. Kim, K. Lee, J. Lee, B. Kim, S. D. Kee, I. Aoki, and D. B. Rutledge, "An optimized design of distributed active transformer," IEEE Trans. Microw. Theory Tech., vol. 53, no. 1, pp. 380-388, Jan. 2005.
25. Y. Kim, J. Han, D. Lee, C. Park, and S. Hong, "A CMOS power amplifier for a UHF RFID reader," in Proc. Asia-Pacific Microw. Conf., Dec. 2006, pp. 141-143.