A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 5, 2001, Pages 823-830

  Yoo, Changsik ^a,b   Huang, Qiuting ^a,c  

^a IEEE   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c ETH ZURICH   (Switzerland)

Author keywords

Class E; CMOS; Common gate switching; Power amplifier; Wireless communication

Indexed keywords

CLASS-E TOPOLOGY; COMMON GATE SWITCHING; FINITE DC-FEED INDUCTANCE; POWER ADDED EFFICIENCY; RADIO FREQUENCY CHOKE; SOFT-SWITCHING PROPERTY;

CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; INDUCTANCE; SWITCHING NETWORKS; TRANSISTORS; WIRELESS TELECOMMUNICATION SYSTEMS;

POWER AMPLIFIERS;

EID: 0035334003     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.918921     Document Type: Article

References (17)

1. The future of CMOS wireless transceivers
2. A 1.9-GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications
3. A single-chip CMOS transceiver for DCS-1800 wireless communications
4. A 900-MHz/1.8-GHz CMOS receiver for dual-band applications
5. A 20-mA-receive 55-mA-transmit GSM transceiver in 0.25-μm CMOS
6. The impact of scaling down to deep-submicron on CMOS RF circuits
7. A 2.5-V 1-W monolithic CMOS RF power amplifier
8. A 1.9-GHz 1-W CMOS class-E power amplifier for wireless communications
9. RF transmitter architectures and circuits
10. Class-E, a new class of high-efficiency tuned single-ended power amplifiers
11. Class-E power amplifiers and frequency multipliers with finite dc feed inductance
12. Low-voltage high-efficiency GaAs class-E power amplifiers for wireless transmitters
13. A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS
14. Novel high-Q bondwire inductor for MMIC