A 900MHz GSM PA in 250nm CMOS with breakdown voltage protection and programmable conduction angle

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2004, Pages 369-372

  Choi, K ^a   Allstot, D J ^a   Krishnamurthy, V ^b  

^a University of Washington   (United States)

^b VT Silicon Inc   (United States)

Author keywords

Class E power amplifier; GSM; Power amplifier; Programmable conduction angle

Indexed keywords

CLASS-E POWER AMPLIFIER; HOT ELECTRON PROTECTION; PROGRAMMABLE CONDUCTION ANGLE; VOLTAGE STRESSES;

BANDWIDTH; CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; OPTIMIZATION; POWER AMPLIFIERS; STANDBY POWER SYSTEMS; STRESSES; TOPOLOGY; WAVEFORM ANALYSIS;

CMOS INTEGRATED CIRCUITS;

EID: 4444250156     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. N.O. Sokal and A.D. Sokal, "Class-E: A new class of high-efficiency tuned single-ended switching power amplifiers," IEEE J. Solid-State Circuits, vol. 10, pp. 168-176, June 1975.
2. C. Yoo and Q. Huang, "A common-gate switched 0.9W class-E power amplifier with 41% PAE in 0.25μm CMOS," IEEE J. Solid-State Circuits, vol. 36, pp. 823-830, May 2001.
3. T. Sowlati and D.M.W. Leenaerts, "A 2.4GHz 0.18um CMOS self-biased cascode power amplifier," IEEE J. Solid-State Circuits, vol. 38, pp. 1318-1324, Aug. 2003.
4. K.-C. Tsai and P.R. Gray, "A 1.9GHz 1W CMOS class-E power amplifier for wireless communications," IEEE J. Solid-State Circuits, vol. 34, pp. 962-970, July 1999.