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Volumn , Issue , 2004, Pages 369-372
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A 900MHz GSM PA in 250nm CMOS with breakdown voltage protection and programmable conduction angle
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Author keywords
Class E power amplifier; GSM; Power amplifier; Programmable conduction angle
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Indexed keywords
CLASS-E POWER AMPLIFIER;
HOT ELECTRON PROTECTION;
PROGRAMMABLE CONDUCTION ANGLE;
VOLTAGE STRESSES;
BANDWIDTH;
CAPACITORS;
ELECTRIC BREAKDOWN;
ELECTRIC POTENTIAL;
GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS;
OPTIMIZATION;
POWER AMPLIFIERS;
STANDBY POWER SYSTEMS;
STRESSES;
TOPOLOGY;
WAVEFORM ANALYSIS;
CMOS INTEGRATED CIRCUITS;
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EID: 4444250156
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (6)
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References (4)
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