Fully integrated 1.9-GHz CMOS power amplifier for polar transmitter applications

Microwave and Optical Technology Letters

Volumn 48, Issue 10, 2006, Pages 2053-2056

  Park, Changkun ^a   Kim, Younsuk ^a   Kim, Haksun ^b   Hong, Songcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Class D; Class E; Dynamic range; GSM; Half turn transformer; Polar transmitter; Power amplifier

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC TRANSFORMERS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; TRANSMITTERS;

DYNAMIC RANGE; HALF TURN TRANSFORMER; POLAR TRANSMITTER;

POWER AMPLIFIERS;

EID: 33748476279     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.21854     Document Type: Article

References (5)

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