High-mobility organic single crystal transistors with submicrometer channels

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Kawanishi, Takafumi ^a   Fujiwara, Takaaki ^a   Akai Kasaya, Megumi ^a,b   Saito, Akira ^a,b   Aono, Masakazu ^c   Takeya, Junichi ^a,b   Kuwahara, Yuji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; GATE DIELECTRICS; METALLIZING; NONMETALS; PLATINUM; POWDERS; SILICA; TRANSISTORS;

CURRENT SATURATION; FIELD EFFECTS; GATE INSULATORS; HIGH MOBILITY; LINEAR REGIONS; MINIATURIZED DEVICES; ON/OFF RATIOS; ORGANIC TRANSISTORS; OUTPUT CHARACTERISTICS; RUBRENE SINGLE CRYSTALS; SHORT-CHANNEL EFFECT (SCE); SILICON DIOXIDES; SINGLE CRYSTAL TRANSISTORS; SOURCE AND DRAIN ELECTRODES; SUB MICROMETERS; SUBMICROMETER CHANNELS;

SINGLE CRYSTALS;

EID: 47549102414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953179     Document Type: Article

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