Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Lematre A ^a   Miard, A ^a   Travers, L ^a   Mauguin, O ^a   Largeau, L ^a   Gourdon, C ^b   Jeudy, V ^b   Tran, M ^c,d   George, J M ^c,d  

^a CNRS   (France)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

^c UNITÉ MIXTE DE PHYSIQUE CNRS THALES   (France)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

(GA , MN)AS; AMERICAN INSTITUTE OF PHYSICS (AIP); CONCENTRATION (COMPOSITION); DOMAIN WALL PROPAGATION; EASY AXIS; EPILAYERS GROWN; EPITAXIAL STRAINS; FERROMAGNETIC SEMICONDUCTORS; GAAS(001) SUBSTRATES; GROWTH DIRECTIONS; MAGNETIC (CE); METAMORPHIC APPROACH;

ANISOTROPY; ARSENIC; ARSENIC COMPOUNDS; CONCENTRATION (PROCESS); CRYSTALLOGRAPHY; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; MAGNETIC ANISOTROPY; MAGNETIC MATERIALS; MAGNETISM; MAGNETIZATION; MAGNETIZATION REVERSAL; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; NONMETALS; PHOSPHORUS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

MAGNETIC PROPERTIES;

EID: 47549101593     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963979     Document Type: Article

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