CW 20-W AlGaN/GaN FET power amplifier for quasi-millimeter wave applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 36-39

  Murase, Y ^a   Wakejima, A ^a   Inoue, T ^a   Yamanoguchi, K ^a   Tanomura, M ^a   Nakayama, T ^a   Okamoto, Y ^a   Ota, K ^a   Ando, Y ^a   Kuroda, N ^a   Matsunaga, K ^a   Miyamoto, H ^a  

^a R&D Association for Future Electron Devices   (Japan)

Author keywords

Current collapse; Field modulating plate; GaN; Millimeter wave; Power amplifiers; Recessed gate

Indexed keywords

AMPLIFIERS (ELECTRONIC); ARSENIC COMPOUNDS; BROADBAND AMPLIFIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MESFET DEVICES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; OPTICAL DESIGN; POWER AMPLIFIERS; SEMICONDUCTOR MATERIALS;

ALGAN GAN; BREAKDOWN CHARACTERISTICS; COMPOUND SEMICONDUCTOR (CS); CONTINUOUS WAVE (CW) OUTPUT POWER; CURRENT COLLAPSE; HIGH GAIN; HIGH OPERATION VOLTAGE; LINEAR GAIN; OUTPUT POWERS; POWER AMPLIFIER MODULE (PAM); QUASI MILLIMETER WAVES; SINGLE CHIPS; SINGLE-ENDED; SOLID STATE POWER AMPLIFIERS (SSPAS);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 47349132936     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.12     Document Type: Conference Paper

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