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Volumn , Issue , 2007, Pages 162-165

An integrated 19-GHz low-phase-noise frequency synthesizer in SiGe BiCMOS technology

Author keywords

24 GHz; BiCMOS; Phase noise; Phase locked loop; SiGe; Wireless LAN

Indexed keywords

ARSENIC COMPOUNDS; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; FREQUENCY SYNTHESIZERS; INTEGRATED CIRCUITS; OPTICAL DESIGN; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SIGNAL GENERATORS; SILICON ALLOYS; TELECOMMUNICATION;

EID: 47349118916     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.44     Document Type: Conference Paper
Times cited : (11)

References (14)
  • 1
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  • 5
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    • Niu, G.1
  • 8
    • 0035446351 scopus 로고    scopus 로고
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    • Sep
    • H. Knapp, et al., "2-GHz/2-mW and 12-GHz/30-mW Dual-Modulus Prescalers in Silicon Bipolar Technology," IEEE Journal of Solid-State Circuits, vol. 36, pp. 1420-1423, Sep. 2001.
    • (2001) IEEE Journal of Solid-State Circuits , vol.36 , pp. 1420-1423
    • Knapp, H.1
  • 9
    • 0000200936 scopus 로고    scopus 로고
    • A 2.6-GHz/5.2-GHz Frequency Synthesizer in 0.4-μm CMOS Technology
    • May
    • C. Lam and B. Razavi, "A 2.6-GHz/5.2-GHz Frequency Synthesizer in 0.4-μm CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 35, pp. 788-794, May. 2000.
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    • Lam, C.1    Razavi, B.2
  • 12
    • 14544277032 scopus 로고    scopus 로고
    • A 24-GHz SiGe Phased-Array Receiver-LO Phase-Shifting Approach
    • Feb
    • H. Hashemi, et al., "A 24-GHz SiGe Phased-Array Receiver-LO Phase-Shifting Approach," IEEE Tran. Micro. Theory Tech., vol. 53, pp. 614-626, Feb. 2005.
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  • 13
    • 34248377841 scopus 로고    scopus 로고
    • Integrated frequency Synthesizer in SiGe BiCMOS Technology for 60 and 24 GHz Wireless Applications
    • Feb
    • F. Herzel, S. Glisic, and W. Winkler, "Integrated frequency Synthesizer in SiGe BiCMOS Technology for 60 and 24 GHz Wireless Applications," Electronics letters, vol. 43, pp. 154-156, Feb. 2007.
    • (2007) Electronics letters , vol.43 , pp. 154-156
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  • 14
    • 20144386911 scopus 로고    scopus 로고
    • A Modular, Low-Cost SiGe:C BiCMOS Process Featuring High-fT and High-BV CEO Transistors
    • Montreal, Canada, pp, Sep
    • D. Knoll, et al., "A Modular, Low-Cost SiGe:C BiCMOS Process Featuring High-fT and High-BV CEO Transistors," in Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM2004), Montreal, Canada, pp. 241-244, Sep. 2004.
    • (2004) Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM2004) , pp. 241-244
    • Knoll, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.