Silicon-germanium ICs for satellite microwave front-ends

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2005, Pages 196-203

  Vaucher, Cicero S ^a   Apeldoorn, Oscar ^b   Apostolidou, Melina ^a   Dekkers, Jacco ^a   Farrugia, Andrew ^a   Gul, Hasan ^b   Kramer, Niels ^b   Praamsma, Louis ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Frequency dividers; Mixers; Phase noise performance; Satellite reception

Indexed keywords

ADAPTIVE SYSTEMS; FREQUENCY SYNTHESIZERS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC);

FREQUENCY DIVIDERS; MIXERS; PHASE NOISE PERFORMANCE; SATELLITE RECEPTION;

SILICON COMPOUNDS;

EID: 27944440571     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)

1. European Telecommunications Standards Institute, "ETSI 300 784 -Television receive only systems satellite earth station operating in 11/12 GHz frequency band," Jul. 1997.
2. European Telecommunications Standards Institute. "ETSI EN 301 790 - Digital Video Broadcasting (DVB) interaction channel for Satellite Distribution Systems," Jul. 2000.
3. P. Deixler et al., "QUBiC4G: a fT/fmax = 70/100 GHz 0.25 μum low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/ s optical networking and emerging wireless applications up to 20 GHz". Bipolar/BiCMOS Circuits and Technology Meeting 2002, pp. 201 - 204
4. BGA 2712 MMIC Wideband Amplifier, Philips Semiconductors Datasheet, Sept. 2002
5. Super low noise HJ FET NE3210S01, California Eastern Laboratories Datasheet, Nov. 2001
6. P. Deixler et al., "QUBiC4X: An fT/fmax = 130/140GHz SiGe:C-BiCMOS manufacturing technology with elite passives for emerging microwave applications", Bipolar/BiCMOS Circuits and Technology Meeting 2004, pp. 233 - 236
7. G. Girlando et al., "A Monolithic 12-GHz Heterodyne Receiver for DVB-S Applications in Silicon Bipolar Technology". IEEE Transactions on Microwave Theory and Techniques, vol. 53. No. 3, March 2005
8. K.L. Fong and R.G. Meyer, "Monolithic RF active mixer design", IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, Vol. 46, No. 3, pp. 231-239, March 1999.
9. C.S. Vaucher, Architectures for RF Frequency Synthesizers. Boston: Kluwer Academic Publishers, 2002
10. EUTELSAT, Earth Station Standard EESS 500, 1996.
11. L.F. Tiemeijer et al., "Predictive spiral inductor compact model for frequency and time domain," Proc. IEEE-IEDM, pp. 875-878, December 2003.
12. U. L. Rohde, RF and Microwave Digital frequency Synthesizers. New York: Wiley, 1997
13. C.S. Vaucher et al., "A Family of Low-Power Truly Modular Programmable Dividers in Standard 0.35-μm CMOS Technology", IEEE Journal of Solid-State Circuits, Jul. 2000, pp. 1039-1045
14. 3 Watt Ka Band Packaged Amplifier TGA4901, TriQuint Semiconductor Datasheet, May 2003
15. California Eastern Labs, "Design considerations for a Ku-band DRO in Digital Communication Systems," Application Note AN 1035, April 2003
16. S. Desgrez et al., "A New MMIC Sampling Phase Detector Design for Space Applications", IEEE Journal of Solid-State Circuits, Vol. 38, No. 9, Sept. 2003, pp. 1438-1442
17. C.S. Vaucher et al., "SiGe Building Blocks for Microwave Frequency Synthesizers," 12th GAAS Symposium Amsterdam, 2004
18. R. Aparicio and A. Hajimiri, "A Noise-Shifting Differential Colpitts VCO," IEEE Journal of Solid-State Circuits. Vol. 37. No. 12, pp. 1728-1736, December 2002.
19. J. Rogers et al. "The Effect of Varactor Nonlinearity on the Phase Noise of Completely Integrated VCOs," IEEE Journal of Solid-State Circuits, Vol. 35. No. 9, pp. 1360-1367, September 2000.
20. K. Ishii et al., "Very-High-Speed Si Bipolar Static Frequency Dividers with New T-Type Flip-Flops," IEEE Journal of Solid-Stale Circuits, Jan. 1995, pp. 19-24
21. C.S. Vaucher and M. Apostolidou, "A Low-Power 20 GHz Static Frequency Divider with Programmable Input Sensitivity". 2002 IEEE Radio Frequency Integrated Circuits Symposium, pp. 235-238