Modification of Si(100)-surfaces by SF6 plasma etching-application to wafer direct bonding

Crystal Research and Technology

Volumn 35, Issue 6, 2000, Pages 807-821

  Reiche, M ^a   Gosele U ^a   Wiegand, M ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL STRUCTURE; ELLIPSOMETRY; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROPHOBICITY; INTERFACES (MATERIALS); OXYGEN; PLASMA ETCHING; SECONDARY ION MASS SPECTROMETRY; SULFUR COMPOUNDS; SURFACE TREATMENT;

MULTIPLE INTERNAL REFLECTION SPECTROSCOPY; PLASMA PRETREATMENTS; WAFER DIRECT BONDING;

SILICON WAFERS;

EID: 0343878165     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200007)35:6/7<807::AID-CRAT807>3.0.CO;2-J     Document Type: Article

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