Generation of defects in amorphous SiO2 assisted by two-step absorption on impurity sites

Journal of Physics Condensed Matter

Volumn 20, Issue 27, 2008, Pages

  Messina, F ^a   Cannas, M ^a   Boscaino, R ^a  

^a UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON COMPOUNDS;

SI DANGLING BONDS;

AMORPHOUS SILICON;

EID: 47249136452     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/27/275210     Document Type: Article

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