Temperature and excitation energy dependence of decay processes of luminescence in Ge-Doped silica

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Agnello, S ^a   Boscaino, R ^a   Cannas, M ^a   Cannizzo, A ^a   Gelardi, M ^a   Grandi, S ^b   Leone, M ^a  

^a UNIVERSITY OF PALERMO   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON DIOXIDE;

ARTICLE; ELECTRONICS; ENERGY; OPTICAL ROTATION; PHOTOLUMINESCENCE; TEMPERATURE; ULTRAVIOLET RADIATION; VACUUM;

EID: 17344394321     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165201     Document Type: Article

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