Fabrication of a silicon oxide film by ozone and 1,1,1,3,3,3- hexamethyldisilazane (HMDS): Infrared Absorption analysis on a photochemical reaction in the gas phase

Journal of the Vacuum Society of Japan

Volumn 51, Issue 3, 2008, Pages 224-227

  Nakamura, Ken ^a   Nonaka, Hidehiko ^a   Kameda, Naoto ^a,b   Nishiguchi, Tetsuya ^a,b   Ichimura, Shingo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIDENSHA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; GAS ABSORPTION; GASES; INFRARED ABSORPTION; LIGHT ABSORPTION; MOLECULES; OXIDE FILMS; OZONE; PHOTOCHEMICAL REACTIONS; PHOTODISSOCIATION; SPECTRUM ANALYSIS;

ATOMIC OXYGEN; CHEMICAL VAPOR DEPOSITIONS (CVD); DIRECT REACTIONS; FT-IR SPECTRUM; HEXAMETHYLDISILAZANE; PHOTO-ASSISTED; SIDE REACTIONS; ULTRAVIOLET LIGHTS;

SILICON OXIDES;

EID: 46749135274     PISSN: 18822398     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj2.51.224     Document Type: Article

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