Ultra-low temperature oxidation of silicon using UV light-exited ozone in wafer-transfer type chamber

Shinku/Journal of the Vacuum Society of Japan

Volumn 48, Issue 5, 2005, Pages 309-312

  Tosaka, Aki ^a   Nishiguchi, Tetsuya ^a,b   Nonaka, Hidehiko ^a   Ichimura, Shingo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIDENSHA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LENSES; LOW TEMPERATURE EFFECTS; OXIDATION; OXYGEN; OZONE; SILICON WAFERS; ULTRAVIOLET RADIATION;

CONCAVE LENS; PRESSURE DEPENDENCE; ULTRA-LOW TEMPERATURE OXIDATION; WAFER-TRANSFER TYPE CHAMBER;

SILICON;

EID: 23344450308     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.48.309     Document Type: Article

References (10)

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