SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C

Shinku/Journal of the Vacuum Society of Japan

Volumn 48, Issue 5, 2005, Pages 313-316

  Nishiguchi, Tetsuya ^a   Noyori, Takeshi ^a   Morikawa, Yoshiki ^a   Kekura, Mitsuru ^a   Nonaka, Hidehiko ^b   Ichimura, Shingo ^b  

^a MEIDENSHA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; GASES; OZONE; REFRACTIVE INDEX; SILICA; THERMAL EFFECTS;

HEXAMETHYL DISILAZANE (HMDS); OZONE GAS; PRECURSORS; SILICON GAS;

SILICON;

EID: 23344439220     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.48.313     Document Type: Article

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