Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3596-3603

  Detalle, M ^a   Remiens D ^a  

^a UNIVERSITÉ DE VALENCIENNES   (France)

Author keywords

A1. Characterization; A1. X ray diffraction; A3. Physical vapor deposition processes; B1. Oxides

Indexed keywords

ANNEALING; ELECTRODES; FERROELECTRIC FILMS; FERROELECTRICITY; INDIUM COMPOUNDS; LANTHANUM COMPOUNDS; NICKEL COMPOUNDS; PHYSICAL VAPOR DEPOSITION; SILICON COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION;

BOTTOM ELECTRODES; CONVENTIONAL ANNEALING; FERROELECTRIC STRUCTURE; OPTIMAL ANNEALING; PHYSICAL CHARACTERIZATION; PHYSICAL VAPOR DEPOSITION PROCESS; RESISTIVITY VALUES; SUBSTRATE HOLDERS;

THIN FILMS;

EID: 46749095885     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.053     Document Type: Article

References (22)

1. Ramesh R., Chan W.K., Wilkens B., Gilchrist H., Sands T., Tarascon J.M., Keramidas V.G., Fork D.K., Lee J., and Safari A. AppI. Phys. Lett. 61 (1992) 1537
2. Ramesh R., Gilchrist H., Tsands A., Keramidas V.G., Haakenaasen R., and Fork D.K. Appl. Phys. Lett. 63 (1993) 3592
3. Liu Z.G., Chen X.Y., Liu J.M., Wu Z.C., and Feng D. Solid State Commun. 91 (1994) 671
4. Nakamura T., Nakao Y., and Takasu H. Jpn. J. Appl. Phys. 33 (1994) 5207
5. Zhao Q., Huang Z.M., Hu Z.G., and Chu J.H. Surf. Coat. Technol. 192 2-3 (2005) 336
6. Hwang K., Lim Y., and Kim B. Mater. Res. Bull. 34 (1999) 2069
7. Li A.D., Ge C.Z., Wu D., Lu P., Zuo Y.Q., Yang S.Z., and Ming N.B. Thin Solid Films 298 (1997) 165
8. Ling Y., Ren W., Wu X.Q., Zhang L.Y., and Yao X. Thin Solid Films 311 (1997) 128
9. Liu Y., Xu N., Zheng X.G., Watanabe T., Agyeman O., and Akiyama M. J. Mater. Sci. 35 (2000) 937
10. Zhu Y., Wang H., Liu P., Yao W., and Cao L. Thin Solid Films 471 (2004) 48
11. Meng X.J., Sun J.L., Yu J., Ye H.J., Guo S.L., and Chu J.H. Appl. Surf. Sci. 171 (2001) 68
12. Guo X., Li C., Zhou Y., and Chen Z. J. Vac. Sci. Technol. A 17 (1999) 917
13. Sanchez F., Ferrater C., Guerrero C., Garcia-Cuenca M.V., and Varela M. Appl. Phys. A 71 (2000) 59
14. Sanchez F., Ferrater C., Alcobe X., Bassas J., Garcia-Cuenca M.V., and Varela M. Thin Solid Films 384 (2001) 200
15. Tseng T.F., Liu K.S., and Wu et N. Lin T.B. Appl. Phys. Lett. 68 18 (1996) 2505
16. Yang C.C., Chen M.S., Hong T.J., Wu C.M., Wu J.M., and Wu T.B. Appl. Phys. Lett. 66 (1995) 2643
17. Wakiya N., Azuma T., Shinozaki K., and Mizutani N. Thin Solid Films 410 (2002) 114
18. Kim H., Kim J.H., and Choo W.K. J. Korean Phys. Soc. 43 (2003) 847
19. Chae B.G., Yang Y.S., Lee S.H., Jang M.S., Lee S.J., and Kim S.H. Thin Solid Films 410 (2002) 107
20. Zhao Q., Huang Z.M., Hu Z.G., and Chu J.H. Surf. Coat. Technol. 192 (2005) 336
21. Zhang X.D., Meng X.J., Sun J.L., Lin T., Ma J.H., Chu J.H., Kwon D.Y., Kim C.W., and Kim BogG. Thin Solid Films 516 6 (2008) 919
22. Sreedhar K., Honig J.M., Darwin M., McElfresh M., Shand P.M., Xu J., Crooker B.C., and Spalek J. Phys. Rev. B 46 (1992) 6382