High-mobility thin-film transistor fabricated using hydrogenated amorphous silicon deposited by discharge of disilane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 3863-3868

  Yamamoto, Shigeichi ^a   Nakamura, Junji ^a   Migitaka, Masatoshi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Field effect transistor; Hybrid excitation CVD; Hydrogenated amorphous silicon; Plasma enhanced chemical vapor deposition (CVD); Silicon nitride; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; HYDROGENATION; PLASMAS; SILICON NITRIDE; STRUCTURE (COMPOSITION);

HYBRID EXCITATION; HYDROGENATED AMORPHOUS SILICON;

THIN FILM TRANSISTORS;

EID: 0030195276     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3863     Document Type: Article

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