Importance of first layer thickness on TFT characteristics using a-Si:H deposited by 2-step process

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1130-1133

  Kashiro, Takeshi ^a   Kawamura, Shin Ichi ^a   Imai, Nobuo ^a   Fukuda, Kaichi ^a   Matsumura, Kunio ^a   Ibaraki, Nobuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; LIQUID CRYSTAL DISPLAYS; MANUFACTURE; THIN FILM TRANSISTORS;

FIRST LAYER THICKNESS; HYDROGENATED AMORPHOUS SILICON; MOBILITY SATURATION; TWO STEP DEPOSITION PROCESS;

AMORPHOUS FILMS;

EID: 0030563439     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00062-2     Document Type: Article

References (5)

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2. Y. Watabe, Display Manufacturing Tech. Conf. Digest of Tech. Papers Jan. (1994) 61.
3. K. Takechi, H. Uchida and S. Kaneko, Abstr. of the 54th. Autumn Meeting of Jpn. Soc. Appl. Phys. (1993) 830.
4. S. Kawamura, K. Fukuda and N. Ibaraki, Ext. Abstr. of the AM-LCD'94 (1994) 116.
5. G. Gangulyland and A. Matsuda, Jpn. J. Appl. Phys. 31 (1992) L1269.