Properties of a-Si:H film deposited by amplitude-modulated RF plasma chemical vapour deposition for thin film transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 328-332

  Nakahigashi, Takahiro ^a   Hayashi, Tsukasa ^a   Izumi, Yoshihiro ^a   Kobayashi, Masanao ^a   Kuwahara, Hajime ^a   Nakabayashi, Masahiro ^a  

^a NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Amplitude modulated RF Plasma; Electron mobility; Hydrogen concentration; Hydrogenated amorphous silicon film; Stress; Thin film transistor; Threshold voltage; Uniformity of thickness

Indexed keywords

ELECTRON MOBILITY; THRESHOLD VOLTAGE;

AMORPHOUS SILICON; AMPLITUDE MODULATION; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; STRESS ANALYSIS; SURFACE STRUCTURE; THIN FILM TRANSISTORS;

AMORPHOUS FILMS;

EID: 0030672217     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.328     Document Type: Article

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