Analysis of plasma-induced modification of ULK and eULK Materials: Dual damascene processing challenges for 45nm (κ ≤ 2.4) and beyond BEOL technologies

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 24-26

  Fuller, N C M ^a,f   Worsley, M A ^a,b   Nitta, S ^a   Dalton, T ^a   Tai, T L ^c   Bent, S ^d   Magbitang, T ^e   Dubois, G ^e   Miller, R ^e   Volksen, W ^e   Sankar, M ^a   Purushothaman, S ^a  

^a IBM RESEARCH   (United States)

^b STANFORD UNIVERSITY   (United States)

^c IBM MICROELECTRONICS   (United States)

^d Stanford University   (United States)

^e IBM ALMADEN RESEARCH CENTER   (United States)

^f IBM Almaden Research Center ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL DATA; AND MODELING; DUAL DAMASCENE; FILM-MODIFICATION; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; ION SCATTERING; OPTICAL EMISSIONS; PATTERNED WAFERS; PLASMA ASH; PLASMA PARAMETERS; PROCESSING CONDITIONS; REACTIVE SPECIES; TEST STRUCTURES;

EMISSION SPECTROSCOPY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; PLASMAS; TECHNOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 50249097632     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648635     Document Type: Conference Paper

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