Evolution of surface morphology of Si-trench sidewalls during hydrogen annealing

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 63-67

  Hiruta, R ^a   Kuribayashi, H ^a   Shimizu, S ^a   Sudoh, K ^b   Iwasaki, H ^b  

^a FUJI ELECTRIC CO   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

AFM; Hydrogen annealing; Step; Surface morphology; Trench

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; HYDROGEN; MORPHOLOGY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

HYDROGEN ANNEALING; SILICON TRENCH; STRUCTURAL CHANGES;

SURFACE CHEMISTRY;

EID: 4644354273     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(04)01004-9     Document Type: Conference Paper

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