Depth dependence of dopant induced features on the Si(100)2×1:H surface and its application for three dimensional dopant profiling

Materials Research Society Symposium - Proceedings

Volumn 699, Issue , 2002, Pages 207-211

  Liu, Lequn ^a   Yu, Jixin ^a   Lyding, Joseph W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; DEGASSING; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; PASSIVATION; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

BAND GAP; DOPANT PROFILING; ELECTRONIC SENSITIVITY; SCANNED PROBE MICROSCOPY; SPATIAL RESOLUTION; SURFACE STATES;

SEMICONDUCTING SILICON;

EID: 0036392741     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J. F. Zheng, X. Liu, N. Newman, E. R. Weber, D. F. Ogletree, and M. Salmeron, Phys. Rev. Lett. 72, 1490 (1994).
2. Lequn Liu, Jixin Yu, and J. W. Lyding, Appl. Phys. Lett. 78, 386 (2001).
3. Lequn Liu, Jixin Yu, and J. W. Lyding, to be published.
4. E. T. Foley, A. F. Kam, and J. W. Lyding, Phys. Rev. Lett. 80, 1336 (1998).
5. I. Adawi, Phys. Rev B 46, 831 (1995).