Microwave characterization and modeling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures

Conference Record - IEEE Instrumentation and Measurement Technology Conference

Volumn 3, Issue , 2004, Pages 2208-2211

  Donato, N ^a   Caddemi, A ^a   Crupi, G ^a   Calandra, E ^b  

^a UNIVERSITY OF MESSINA   (Italy)

^b UNIVERSITY OF PALERMO   (Italy)

Author keywords

Cold FET; Cryogenic Temperatures; Low Noise Devices; Microwave Characterization; Small Signal Modeling

Indexed keywords

CRYOGENIC TEMPERATURES; LOW-NOISE DEVICES; MICROWAVE CHARACTERIZATION;

COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYOGENICS; GATES (TRANSISTOR); MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL PROCESSING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4644268237     PISSN: 10915281     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMTC.2004.1351529     Document Type: Conference Paper

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