X-ray diffraction study on GaAs(0 0 1)- 2 × 4 surfaces under molecular-beam epitaxy conditions

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 219-223

  Takahasi, M ^a   Yoneda, Y ^a   Mizuki, J ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Semiconductor; Surface relaxation and reconstruction; X ray scattering, diffraction, and reflection

Indexed keywords

DESORPTION; DIMERS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

MIRROR SYMMETRY; SURFACE RECONSTRUCTION; X-RAY REFLECTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4644223253     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.07.018     Document Type: Conference Paper

References (23)

1. D.J. Chadi, J. Vac. Sci. Technol. A 5 (1987) 834.
2. J.E. Northrup, S. Froyen, Phys. Rev. B 50 (1994) 2015.
3. T. Hashizume, Q.K. Xue, A. Ichimiya, T. Sakurai, Phys. Rev. B 51 (1995) 4200.
4. Y. Garreau, M; Sauvage-Simkin, N. Jedrecy, R. Pinchaux, M.B. Veron, Phys. Rev. B 54 (1996) 17638.
5. W.G. Schmidt, F. Bechstedt, Phys. Rev. B 54 (1996) 16742.
6. J.M. McCoy, U. Korte, P.A. Maksym, Surf. Sci. 418 (1998) 273.
7. V.P. LaBella, H. Yang, D.W. Bullock, P.M. Thibado, P. Kratzer, M. Scheffler, Phys. Rev. Lett. 83 (1999) 2989.
8. W.G. Schmidt, S. Mirbt, F. Bechstedt, Phys. Rev. B 62 (2000) 8087.
9. A. Ichimiya, Y. Nishikawa, M. Uchiyama, Surf. Sci. 493 (2001) 232.
10. H.H. Farrell, C.J. Palmsttom, J. Vac. Sci. Technol. B 8 (1990) 903.
11. J. Zhou, Q. Xue, H. Chaya, T. Hashizume, T. Sakurai, Appl. Phys. Lett. 64 (1994) 583.
12. A.R. Avery, C.M. Goringe, D.M. Holmes, J.L. Sudijono, T.S. Jones, Phys. Rev. Lett. 76 (1996) 3344.
13. V.P. LaBella, D.W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, P.M. Thibado, Phys. Rev. Lett. 84 (2000) 4152.
14. M. Takahasi, Y. Yoneda, N. Yamamoto, J. Mizuki, Phys. Rev. B 68 (2003) 085321.
15. S.-H. Lee, W. Moritz, M. Scheffler, Phys. Rev. Lett. 85 (2000) 3890.
16. C. Ratsch, W. Barvosa-Carter, F. Grosse, J.H.G. Owen, J.J. Zinck, Phys. Rev. B 62 (2000) R7719.
17. S. Tsukamoto, N. Koguchi, J. Cryst. Growth 201/202 (1999) 118.
18. M. Takahasi, Y. Yoneda, H. Inoue, N. Yamamoto, J. Mizuki, Jpn. J. Appl. Phys. 41 (2002) 6247.
19. B. Jenichen, W. Braun, V. Kaganer, A.G. Shtukenberg, L. Däweritz, C.-G. Schulz, K.H. Ploog, Rev. Sci. Instrum. 74 (2003) 1267.
20. R. Feidenhans'l, Surf. Sci. Rep. 10 (1989) 105.
21. H.X. Gao, L.-M. Peng, Acta Crystallogr. Sec. A 55 (1999) 926.
22. H. Yamaguchi, Y. Horikoshi, Phys. Rev. B 51 (1995) 9836.
23. A. Ohtake, M. Ozeki, T. Yasuda, T. Hanada, Phys. Rev. B 65 (2002) 165315.