High performance AlGaN/GaN HEMTs with a field plated gate structure

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 434-435

  Chini, Alessandro ^a   Buttari, Dario ^a   Coffie, Robert ^a   Shen, Likun ^a   Heikman, Sten ^a   Chakraborty, Arpan ^a   Keller, Stacia ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; SAPPHIRE; SEMICONDUCTOR DEVICES;

ALGAN/GAN HEMTS; GATE STRUCTURE; HIGH POWER DENSITY; HIGH-EFFICIENCY; POWER DENSITIES; SAPPHIRE SUBSTRATES; SIC SUBSTRATES; THIRD ORDER INTERMODULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33749242021     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272169     Document Type: Conference Paper

References (4)

1. R. Vetury, N.-Q. Zhang, S. Keller and U. K. Mishra, "The impact of surface states on the DC and RJF characteristics of AlGaN/GaN HFETs", IEEE Trans. Electron Devices, vol. 48, pp. 560-566, Mar. 2001.
2. K Asano, Y. Miyoshi, K. Ishikura, Y. Nashimoto, M. Kuzuhara, and M. Mizuta, "Novel High Power AIGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage", IEDM Conference, 1998, pp. 59-62.
3. A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, and U. K. Mishra, "2.1 A/mm Current Density AlGaN/GaN HEMP', Electronics Letters, Vol. 39, Issue 7, 3 Apr 2003, pp.625-626.
4. 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs", IEEE Electron Device Letters, IEEE, Vol. 23, No. 3, pp.118-120, Mar 2002.