Flip-chip integration of power HEMTs: A step towards a GaN MMIC technology

Conference Proceedings - 33rd European Microwave Conference, EuMC 2003

Volumn 1, Issue , 2003, Pages 383-386

  Seemann, Kay ^a,b   Ramberger, Suitbert ^a,b   Tessmann, Axel ^a,b   Quay, Rüdiger ^a,b   Schneider, Joachim ^a,b   Rießle, Markus ^a,b   Walcher, Herbert ^a,b   Kuri, Michael ^a,b   Kiefer, Rudolf ^a,b   Schlechtweg, Michael ^a,b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP CHIP DEVICES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON CARBIDE;

ACTIVE DEVICES; FLIP CHIP; FLIP CHIP TECHNOLOGIES; GAAS PHEMT; GAN MMIC; MATCHING CIRCUIT; SIC SUBSTRATES;

TECHNOLOGY;

EID: 46149085272     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2003.1262299     Document Type: Conference Paper

References (9)

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