Floating body cell with independently-controlled double gates for high density memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Ban, Ibrahim ^a   Avci, Uygar E ^a   Shah, Uday ^a   Barns, Chris E ^a   Kencke, David L ^a   Chang, Peter ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BODIES OF REVOLUTION; ELECTRON DEVICES; FINS (HEAT EXCHANGE); OPTICAL DESIGN; SILICON;

BACK GATES; DOUBLE GATES; FIN WIDTHS; FLOATING BODIES; HIGH-DENSITY MEMORY; MEMORY PERFORMANCE; SCALING CONSTRAINTS; SELF-ALIGNED;

DATA STORAGE EQUIPMENT;

EID: 46049103027     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346847     Document Type: Conference Paper

References (8)

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