|
|
Volumn 602, Issue 13, 2008, Pages 2315-2324
|
|
Ultra thin silicon nitride films on Si(1 0 0) studied with core level photoemission
a,b
a
|
|
Author keywords
Bulk and interface states; Core level photoelectron spectroscopy with synchrotron radiation; Silicon nitride on Si(1 0 0); Ultra thin film growth
|
|
Indexed keywords
AMORPHOUS FILMS;
AMORPHOUS SILICON;
CUBIC BORON NITRIDE;
EMISSION SPECTROSCOPY;
FILM GROWTH;
GROWTH TEMPERATURE;
MOLECULAR BEAM EPITAXY;
NITRIDES;
NITROGEN;
NONMETALS;
PHOTOELECTRICITY;
PHOTOEMISSION;
SILICON;
SILICON NITRIDE;
SURFACE PROPERTIES;
SURFACES;
THICK FILMS;
THIN FILMS;
(1 1 0) SURFACE;
(E ,3E) PROCESS;
AMORPHOUS CHARACTERS;
CORE-LEVEL PHOTOEMISSION;
CORE-LEVEL PHOTOEMISSION SPECTROSCOPY;
ELECTRICAL QUALITY;
ELSEVIER (CO);
NITRIDE FILMS;
NITROGEN PLASMAS;
PURE SILICON;
SI(1 0 0 );
SUBSTRATE TEMPERATURE (ST);
ULTRA THIN SILICON;
ULTRA-THIN FILM (UTF);
MICROFLUIDICS;
|
|
EID: 45849142545
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2008.05.013 Document Type: Article |
|
Times cited : (22)
|
|
References (11)
|
