Study of pore reorganisation during annealing of macroporous silicon structures for solar cell application

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6934-6938

  Depauw, V ^a,b   Richard, O ^a   Bender, H ^a   Gordon, I ^a   Beaucarne, G ^a   Poortmans, J ^a   Mertens, R ^a   Celis, J P ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Argon anneal; Macroporous silicon; Silicon dioxide; Silicon surface migration; Structural change; Thin film silicon solar cell; Void

Indexed keywords

ANNEALING; ARGON; AUGER ELECTRON SPECTROSCOPY; DIRECT ENERGY CONVERSION; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON OPTICS; FOURIER TRANSFORMS; HYDROGEN; IMAGING TECHNIQUES; INERT GASES; INFRARED SPECTROSCOPY; MICROSCOPIC EXAMINATION; NONMETALS; OXYGEN; PHOTOVOLTAIC CELLS; POROUS SILICON; SCANNING; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; STEEL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

(100) SILICON; (E ,3E) PROCESS; (I ,J) CONDITIONS; ELSEVIER (CO); EMPTY SPACE; FOURIER; HIGH QUALITY (HQ); HIGH TEMPERATURE (HT); MACRO POROUS SILICON; MACRO-PORES; OXYGEN IMPURITIES; PROPERTY (S); REORGANISATION; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; THIN LAYERING; TRANSFORM INFRA RED SPECTROSCOPY;

SILICON WAFERS;

EID: 45849122545     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.041     Document Type: Article

References (13)

1. Brendel R. Thin-film Crystalline Silicon Solar Cells (2003), Wiley-VCH, Weinheim chap. 1
2. V. Depauw, I. Gordon, G. Beaucarne, J. Poortmans, J.-P. Celis, R. Mertens, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference and Exhibition, Milano, Italy, September 3-7 2007, 1997.
3. Mizushima I., Sato T., Taniguchi S., and Tsunashima Y. Appl. Phys. Lett. 77 (2000) 3290
4. Sato T., Mitsutake K., Mizushima I., and Tsunashima Y. Jpn. J. Appl. Phys. 39 (2000) 5033
5. M.M. Hassan, M.Y. Ghannam, V. Depauw, G. Beaucarne, J. Poortmans, R. Mertens, this journal, doi:10.1016/j.tsf.2007.12.086.
6. Yamada N., and Yamada-Kaneta H. J. Electrochem. Soc. 145 (1998) 3628
7. Ludsteck A., Schulze J., Eisele I., Dietl W., and Nenyei Z. J. Appl. Phys. 95 (2004) 2827
8. Depauw V., Kim H.J., Beaucarne G., Poortmans J., Celis J.-P., and Mertens R. Phys. Status Solidi, (C) 4 (2007) 1928
9. Deal B.E., and Grove A.S. J. Appl. Phys. 36 (1965) 3770
10. Claassen W.A.P., and Bloem J. J. Electrochem. Soc. 127 (1980) 194
11. Smith F.W., and Ghidini G. J. Electrochem. Soc. 129 (1982) 1300
12. Lehmann V. Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications (2002), Wiley-VCH, Weinheim 117
13. Cerofolini G.F., and Meda L. Appl. Surf. Sci. 89 (1995) 351