A quantitative stress-related model for the evolution of the pore size in porous silicon during high temperature annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 269-273

  Hassan, Moustafa M ^a   Ghannam, Moustafa Y ^a   Poortmans, Jef ^b   Mertens, Robert ^b  

^a The American University in Cairo   (Egypt)

^b IMEC   (Belgium)

Author keywords

Critical radius; High temperature annealing; Initial stress; Morphology; Porous silicon; Structural evolution

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; HIGH TEMPERATURE OPERATIONS; PORE SIZE;

CRITICAL RADIUS; HIGH TEMPERATURE ANNEALING; INITIAL STRESS; STRUCTURAL EVOLUTION;

POROUS SILICON;

EID: 33751307983     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.059     Document Type: Article

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