Optimization of advanced PMOS junctions using Ge, B and F co-implants

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 46-52

  Graoui, H ^a   Hilkene, M ^a   McComb, B ^a   Castle, M ^a   Felch, S ^a   Al Bayati, A ^a   Tjandra, A ^a   Foad, M A ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

Boron; Co implantation; Diffusion; Fluorine; Pre amorphization; Ultra shallow junction

Indexed keywords

AMORPHIZATION; BORON; FLUORINE; GERMANIUM; ION IMPLANTATION; MOS DEVICES; POSITIVE IONS;

CO-IMPLANTATION; FLUORINE ENERGY; PRE-AMORPHIZATION; ULTRA SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 23444459560     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.111     Document Type: Conference Paper

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