High-Power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

IEEE Photonics Technology Letters

Volumn 20, Issue 10, 2008, Pages 782-784

  Zhang, Z Y ^a   Hogg, R A ^a   Jin, P ^b   Choi, T L ^a   Xu, B ^b   Wang, Z G ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Molecular beam epitaxy (MBE); Quantum dots (QDs); Superluminescent light emitting diodes (SLEDs)

Indexed keywords

EID: 45749103329     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.921108     Document Type: Article

References (15)

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