Quantum dot superluminescent diodes - Bandwidth engineering and epitaxy for high powers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 289-292

  Choi, T L ^a   Ray, S K ^a   Zhang, Z ^a   Childs, D ^a   Groom, K M ^a   Stevens, B J ^a   Liu, H ^a   Hopkinson, M ^a   Hogg, R A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Quantum dots; Semiconductor lasers; Superluminescent diodes

Indexed keywords

EPITAXIAL GROWTH; LUMINESCENT DEVICES; SEMICONDUCTOR DIODES;

BANDWIDTH ENGINEERING; SUPERLUMINESCENT DIODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34748853160     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381180     Document Type: Conference Paper

References (10)

1. C. F. Lin, B. L. Lee, P. C. Lin, "Broad-band Superluminescent Diodes Fabricated on a Substrate with Asymmetric Dual Quantum Wells", IEEE Phot. Tech. Lett., 8 (7), p.1456, July 1996.
2. S.D. McDougal, O.P. Kowalski, J.H. Marsh, J.S. Aitchison "Broad Optical Bandwidth InGaAs-InAlGaAs Light-Emitting Diodes Fabricated Using a Laser Annealing Process" IEEE Phot. Tech.. Lett. 11(15), 1557, Dec. 1999.
3. M. Rosseti, A. Markus, A. Fiore, L. Occhi, C. Velez. "Quantum dot superluminescent diodes emitting at 1.3 μm " IEEE Phot. Tech.. Lett. Mar. 2005.
4. S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, R. A. Hogg. "Broad-Band Superluminescent Light-Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells". IEEE Phot. Tech. Lett. 18 (1), p 58, Jan. 2006.
5. H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutiérrez, M. Hopkinson, J. S. Ng, J. P. R. David, R. Beanland. "Improved performance of 1.3μm multilayer InAs quantum dot lasers using a high growth temperature GaAs spacer layer". Appl. Phys. Lett. 85 (5), p.704, 2004.
6. H. Y. Liu, D. T. Childs, T. J. Badcock, K. M. Groom, I. R. Sellers, M. Hopkinson, R. A. Hogg, D. J. Robbins, D. J. Mowbray, M. S. Skolnick. "High performance 3-layer InAs/GaAs quantum dot lasers with very low continuous wave room temperature threshold currents". IEEE Phot. Tech. Lett. 17 (6), p. 1139, June 2005.
7. H. Y. Liu, S. L. Liew, T. Badcock, D. J. Mowbray, M. S. Skolnick, S. K. Ray, T. L. Choi, K. M. Groom, B. Stevens, F. Hasbullah, C. Y. Jin, M. Hopkinson, R. A. Hogg, "p-doped 1.3 mu m InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency" Appl. Phys. Lett. 89 (7), Aug. 2006.
8. Tien-Pei Lee, Charles A.Burrus, Jr., and B.I.Miller. "A Stripe-Geometry Double Heterstructure Amplified Spontaneous Emission (Superluminescent) Diode" IEEE Journal of Quantum Electronics, Vol. QE-9, No. 8, pp820-828, 1971.
9. Petr G Eliseev, H. Li, G. T. Liu, Andreas Stintz, T. C. Newell, L.F. Lester and K. J. Malloy. "Ground-State Emission and Gain in Ultralow-Threshold InAs-InGaAs Quantum Dot Lasers" IEEE Journal on Selected Topics in Quantum Electronics, Vol. 7, No. 2, pp135-142, 2001.
10. Grundmann and D. Bimberg, "Theory of Random Population for Quantum Dots," M. Physical Rev. B, Volume 55, Number 15, pp. 9740-9745, 1997.