InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

Electronics Letters

Volumn 41, Issue 25, 2005, Pages 55-56

  Liu, N ^a   Jin, P ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FABRICATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ACTIVE REGION; PULSE INJECTION; SUPERLUMINESCENT DIODES;

SEMICONDUCTOR DIODES;

EID: 29144499006     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053822     Document Type: Article

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