High Power GalnAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5121-5122

  Yamatoya, Takeshi ^a   Mori, Shota ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Multiwavelength light source; Quantum wells; Spectrum slicing; Superluminescent diode; Tapered active region; Wavelength division multiplexing

Indexed keywords

SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; WAVELENGTH DIVISION MULTIPLEXING;

SUPERLUMINESCENT DIODES;

QUANTUM WELL LASERS;

EID: 0033317758     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5121     Document Type: Article

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