New simulation methodology for effects of radiation in semiconductor chip structures

IBM Journal of Research and Development

Volumn 52, Issue 3, 2008, Pages 245-253

  Tang, Henry H K ^a   Murray, Conal E ^a   Fiorenza, Giovanni ^a   Rodbell, Kennth P ^a   Gordon, Michael S ^a   Heidel, David F ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; INDUSTRY; PHOTOACOUSTIC EFFECT; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TECHNOLOGY;

APPLIED (CO); BACK END OF LINE (BEOL); BASIC CONCEPTS; BUILDING BLOCKS; CHIP STRUCTURES; CRITICAL PROBLEMS; EFFECT ANALYSIS; INTERNATIONAL BUSINESS; METAL-OXIDE SEMICONDUCTOR (MOS); MODELING METHODOLOGIES; MONTE CARLO MODELLING; NEW DEVICES; PARTICLE TRANSPORT; SIMULATION METHODOLOGY; SIMULATION TECHNIQUES;

METAL ANALYSIS;

EID: 45749085296     PISSN: 00188646     EISSN: 00188646     Source Type: Journal    
DOI: 10.1147/rd.523.0245     Document Type: Review

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