Single-event-upset critical charge measurements and modeling of 65 nm silicon-on-insulator latches and memory cells

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3512-3517

  Heidel, David F ^a   Rodbell, Kenneth P ^a   Oldiges, Phil ^a   Gordon, Michael S ^a   Tang, Henry H K ^a   Cannon, Ethan H ^b   Plettner, Cristina ^a  

^a IBM RESEARCH   (United States)

^b IBM   (United States)

Author keywords

Critical charge; Qcrit; SER; Single event upsets; SOI

Indexed keywords

COMPUTER SIMULATION; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); Q SWITCHING; STORAGE ALLOCATION (COMPUTER);

CRITICAL CHARGE; MEMORY CELLS; SINGLE EVENT UPSET;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33846309987     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886223     Document Type: Conference Paper

References (12)

1. P. Roche and G. Gasiot, "Impacts of front-end and middle-end process modifications on terrestrial soft error rate," IEEE Trans. Device Mater. Reliab., vol. 5, no. 3, pp. 382-396, Sep. 2005.
2. A. KleinOsowski, P. Oldiges, P. M. Solomon, and R. Q. Williams, "Modeling ionizing radiation in 65 nm silicon on insulator semiconductor devices with a double current pulse," in Proc. NSREC, 2006, submitted for publication.
3. E. M. Buturla, P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, "Finite-element analysis of semiconductor devices: The FIELDAY program," IBM J. Res. Develop., vol. 25, no. 4, pp. 218-231, Jul. 1981.
4. M. Ieong, R. Logan, and J. Slinkman, "Efficient quantum correction model for multi-dimensional CMOS simulations," in Proc. SISPAD Tech. Dig., 1998, pp. 129-132.
5. P. E. Dodd, "Physics-based simulation of single-event effects," IEEE Trans. Device Mater. Reliab., vol. 5, no. 3, pp. 343-357, Sep. 2005.
6. E. Leobandung, "High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell," in Proc. Symp. VLSI Technology Dig. Technical Papers, 2005, p. 126, IEEE.
7. H. H. K. Tang and E. H. Cannon, "SEMM2: A modeling system for single event upset analysis," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3342-3348, Dec. 2004.
8. H. H. K. Tang, MCHIDQ Code: 3-D Monte Carlo Heavy Ion Charge Deposition Simulator 2005, IBM proprietary code.
9. H. H. K. Tang, C. Murray, G. Fiorenza, and K. P. Rodbell, Nuclear Instrm. Phys. Res. A, submitted for publication.
10. W. H. Bragg and R. Kleeman, "On the a particles of radium and their loss of range in passing through various atoms and molecules," Phil. Mag., vol. 10, pp. 318-340, 1905.
11. P. Oldiges, R. Dennard, D. Heidel, B. Klaasen, F. Assaderaghi, and M. leong, "Theoretical determination of the temporal and spatial structure of alpha-particle induced electron-hole pair generation in silicon," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2575-2579, Dec. 2000.
12. P. C. Murley and G. R. Srinivasan, "Soft-error monte carlo modeling program, SEMM," IBM J. Res. Develop., vol. 40, no. 1, pp. 109-118, Jan. 1996.