Comparison of performance of quantum dot and other types infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6940, Issue , 2008, Pages

  Martyniuk, P ^a   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Detectivity; HgCdTe photodiodes; Performance comparison; QDIPs; QWIPs

Indexed keywords

ABSORPTION; COMPUTER NETWORKS; DETECTORS; FORECASTING; HIGH TEMPERATURE SUPERCONDUCTORS; INFRARED DETECTORS; INFRARED RADIATION; MATHEMATICAL MODELS; MERCURY COMPOUNDS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; QUANTUM ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON DETECTORS; TECHNOLOGY;

AB SORPTION COEFFICIENTS; COMPARATIVE STUDIES; DETECTIVITY; DETECTOR PERFORMANCE; DOPED SILICON; EXPERIMENTAL DATA; GENERATION RATE; HGCDTE PHOTODIODES; HIGH TEMPERATURE (HT); INFRARED (IR); INFRARED PHOTO DETECTORS; INFRARED TECHNOLOGIES; MATERIAL TECHNOLOGIES; NON UNIFORMITIES; NORMAL INCIDENCE; OPERATING TEMPERATURES; PERFORMANCE LIMITATIONS; QD SIZE; QUANTUM DOT (CO); QUANTUM DOT INFRARED PHOTODETECTORS (QDIPS); QUANTUM WELL INFRARED PHOTODETECTORS (QWIPS); RESPONSIVITY; SCHOTTKY BARRIER (SB); TYPE II; TYPE II SUPERLATTICE;

MULTITASKING;

EID: 45549094213     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.785200     Document Type: Conference Paper

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